Development of novel oxide multilayer mirrors at "water-window" wavelengths by atomic layer deposition / atomic layer epitaxy

Atomic Layer Deposition of Aluminum Oxide

I Acknowledgements II Dedication III List of Figures V

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amo...

Ultrathin oxide films by atomic layer deposition on graphene.

In this paper, a method is presented to create and characterize mechanically robust, free-standing, ultrathin, oxide films with controlled, nanometer-scale thickness using atomic layer deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pr...

Atomic Layer Deposition of TiO

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Atomic layer deposition: an overview.